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? semiconductor components industries, llc, 2017 october, 2017 ? rev. 14 1 publication order number: ncp170/d ncp170 ultra\low i q 150 ma cmos ldo regulator the ncp170 series of cmos low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current. the ultra-low consumption of typ. 500 na ensures long battery life and dynamic transient boost feature improves device transient response for wireless communication applications. the device is available in small 1 1 mm xdfn4, sot-563 and tsop-5 packages. features ? operating input voltage range: 2.2 v to 5.5 v ? output voltage range: 1.2 v to 3.6 v (0.1 v steps) ? ultra-low quiescent current typ. 0.5 a ? low dropout: 170 mv typ. at 150 ma ? high output voltage accuracy 1% ? stable with ceramic capacitors 1 f ? over-current protection ? thermal shutdown protection ? ncp170a for active discharge option ? available in small 1 1 mm xdfn4, sot?563 and tsop-5 packages ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? battery powered equipments ? portable communication equipments ? cameras, image sensors and camcorders figure 1. typical application schematic ncp170 in en out v in v out 1 f1 f c out c in gnd www. onsemi.com xdfn4 mx suffix case 711aj marking diagrams see detailed ordering, marking and shipping information on page 19 of this data sheet. ordering information sot?563 xv suffix case 463a 1 xx = specific device code m = date code *pb-free indicator, ?g? or microdot ? ?, may or may not be present. xx m 1 1 6 xx = specific device code m = month code = pb-free package xx m 1 sot?563 xdfn4 tsop?5 sn suffix case 483 1 5 (note: microdot may be in either location) xxx = specific device code a = assembly location y = year w = work week = pb?free package 1 5 xxxayw tsop?5
ncp170 www. onsemi.com 2 pin function description pin no. xdfn4 pin no. sot?563 pin no. tsop?5 pin name description 4 1 1 in power supply input voltage 2 2 2 gnd power supply ground 3 6 3 en chip enable pin (active ?h?) 1 3 5 out output pin epad ? ? epad internally connected to gnd ? 4 4 nc no connect ? 5 ? gnd power supply ground absolute maximum ratings symbol rating value unit v in input voltage (note 1) 6.0 v v out output voltage ?0.3 to v in + 0.3 v v ce chip enable input ?0.3 to 6.0 v t j(max) maximum junction temperature 150 c t stg storage temperature ?55 to 150 c esd hbm esd capability, human body model (note 2) 2000 v esd mm esd capability, machine model (note 2) 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec-q100-002 (eia/jesd22-a114) esd machine model tested per aec-q100-003 (eia/jesd22-a115) latchup current maximum rating tested per jedec standard: jesd78 thermal characteristics symbol rating value unit r ja thermal characteristics, thermal resistance, junction-to-air xdfn4 1 1mm sot?563 tsop?5 250 200 250 c/w figure 2. simplified block diagram
ncp170 www. onsemi.com 3 electrical characteristics ? voltage version 1.2 v (?40 c t j 85 c; v in = 2.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 3) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 1.188 1.2 1.212 v ?40 c t j 85 c 1.176 1.2 1.224 line reg line regulation 2.5 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 2.5 v ?20 1 20 mv v do dropout voltage (note 4) ? ? ? mv i out output current (note 5) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pin current v en v in 5.5 v (note 6) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 2.2 v + 200 mvpp modulation i out = 150 ma i out = 10 ma ? ? 57 63 ? ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma, f = 100 hz to 1 mhz, c out = 1 f ? 85 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 6) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 6) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 6) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 4. not characterized at v in = 2.2 v, v out = 1.2 v, i out = 150 ma. 5. respect soa. 6. guaranteed by design and characterization.
ncp170 www. onsemi.com 4 electrical characteristics ? voltage version 1.5 v (?40 c t j 85 c; v in = 2.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 7) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 1.485 1.5 1.515 v ?40 c t j 85 c 1.470 1.5 1.530 line reg line regulation 4.3 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 4.3 v ?20 ? 20 mv v do dropout voltage i out = 150 ma (note 8) ? ? ? mv i out output current (note 9) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pin current v en v in 5.5 v (note 10) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 2.5 v + 200 mvpp modulation i out = 150 ma ? 57 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma, f = 100 hz to 1 mhz, c out = 1 f ? 90 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 10) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 10) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 10) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 7. performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 8. not characterized at v in = 2.2 v, v out = 1.5 v, i out = 150 ma. 9. respect soa. 10. guaranteed by design and characterization.
ncp170 www. onsemi.com 5 electrical characteristics ? voltage version 1.8 v (?40 c t j 85 c; v in = 2.8 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 11) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v i out < 30 ma 2.0 ? 5.5 v out output voltage t a = +25 c 1.782 1.8 1.818 v ?40 c t j 85 c 1.764 1.8 1.836 line reg line regulation 2.8 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 2.8 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 12) ? 350 480 mv i out output current (note 13) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 14) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 2.8 v + 200 mvpp modulation i out = 150 ma ? 57 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 95 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 14) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 14) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 14) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 11. performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 12. characterized when v out falls 54 mv below the regulated voltage and only for devices with v out = 1.8 v. 13. respect soa. 14. guaranteed by design and characterization.
ncp170 www. onsemi.com 6 electrical characteristics ? voltage version 2.5 v (?40 c t j 85 c; v in = 3.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 15) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 2.475 2.5 2.525 v ?40 c t j 85 c 2.450 2.5 2.550 line reg line regulation 3.5 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 3.5 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 16) ? 240 330 mv i out output current (note 17) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 18) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 3.5 v + 200 mvpp modulation i out = 150 ma ? 57 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 125 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 18) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 18) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 18) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 15.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 16. characterized when v out falls 75 mv below the regulated voltage and only for devices with v out = 2.5 v. 17. respect soa. 18. guaranteed by design and characterization.
ncp170 www. onsemi.com 7 electrical characteristics ? voltage version 2.8 v (?40 c t j 85 c; v in = 3.8 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 19) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 2.772 2.8 2.828 v ?40 c t j 85 c 2.744 2.8 2.856 line reg line regulation 3.8 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 3.8 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 20) ? 210 300 mv i out output current (note 21) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 195 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 22) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 3.8 v + 200 mvpp modulation i out = 150 ma ? 40 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 125 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 22) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 22) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 22) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 19.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 20. characterized when v out falls 84 mv below the regulated voltage and only for devices with v out = 2.8 v. 21. respect soa. 22. guaranteed by design and characterization.
ncp170 www. onsemi.com 8 electrical characteristics ? voltage version 3.0 v (?40 c t j 85 c; v in = 4.0 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 23) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 2.97 3.0 3.03 v ?40 c t j 85 c 2.94 3.0 3.06 line reg line regulation 4.0 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 4 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 24) ? 190 260 mv i out output current (note 25) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 195 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 26) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 4.0 v + 200 mvpp modulation i out = 150 ma ? 47 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 120 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 26) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 26) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 26) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 23.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 24. characterized when v out falls 90 mv below the regulated voltage and only for devices with v out = 3.0 v. 25. respect soa. 26. guaranteed by design and characterization.
ncp170 www. onsemi.com 9 electrical characteristics ? voltage version 3.3 v (?40 c t j 85 c; v in = 4.3 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 27) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 3.267 3.3 3.333 v ?40 c t j 85 c 3.234 3.3 3.366 line reg line regulation 4.3 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 4.3 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 28) ? 180 250 mv i out output current (note 29) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 195 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 30) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 4.3 v + 200 mvpp modulation i out = 150 ma ? 41 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 125 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 30) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 30) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 30) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 27.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 28. characterized when v out falls 99 mv below the regulated voltage and only for devices with v out = 3.3 v. 29. respect soa. 30. guaranteed by design and characterization. typical characteristics figure 3. output voltage vs. temperature, vout = 1.2 v figure 4. output voltage vs. temperature, vout = 1.8 v temperature ( c) temperature ( c) 80 60 40 20 0 ?20 ?40 1.190 1.192 1.194 1.196 1.198 1.200 1.202 80 60 40 20 0 ?20 ?40 1.790 1.792 1.794 1.796 1.798 1.800 1.802 output voltage (v) output voltage (v) vin = 5.5 v vin = 3.0 v vin = 2.2 v vin = 5.5 v vin = 3.5 v vin = 2.8 v ncp170xxx120tyg cin = cout = 1 f iout = 1 ma ncp170xxx180tyg cin = cout = 1 f iout = 1 ma
ncp170 www. onsemi.com 10 typical characteristics figure 5. output voltage vs. temperature, vout = 3.0 v figure 6. output voltage vs. temperature, vout = 3.6 v temperature ( c) temperature ( c) 80 60 40 20 0 ?20 ?40 2.984 2.988 2.992 2.996 3.000 3.004 3.008 80 60 40 20 0 ?20 ?40 3.580 3.584 3.588 3.592 3.596 3.600 3.604 figure 7. output voltage vs. output current, vout = 1.2 v figure 8. output voltage vs. output current, vout = 1.8 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 1.194 1.195 1.196 1.197 1.198 1.199 1.200 140 120 100 80 60 40 20 0 1.790 1.792 1.794 1.796 1.798 1.800 1.802 figure 9. output voltage vs. output current, vout = 3.0 v figure 10. output voltage vs. output current, vout = 3.6 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 2.996 2.997 2.998 2.999 3.000 3.001 3.002 140 120 100 80 60 40 20 0 3.593 3.594 3.595 3.596 3.597 3.598 3.599 output voltage (v) output voltage (v) output voltage (v) output voltage (v) output voltage (v) output voltage (v) vin = 5.5 v vin = 5.0 v vin = 3.3 ? 4.5 v ncp170xxx300tyg cin = cout = 1 f iout = 1 ma vin = 5.5 v vin = 5.0 v ncp170xxx360tyg cin = cout = 1 f iout = 1 ma vin = 3.8 ? 4.5 v vin = 5.5 v vin = 4.0 v ncp170xxx120tyg cin = cout = 1 f t a = 25 c vin = 3.0 v vin = 2.5 v vin = 5.5 v vin = 4.5 v ncp170xxx180tyg cin = cout = 1 f t a = 25 c vin = 4.0 v vin = 2.8 v vin = 5.5 v vin = 5.0 v ncp170xxx300tyg cin = cout = 1 f t a = 25 c vin = 4.5 v vin = 4.0 v vin = 5.5 v vin = 5.0 v ncp170xxx360tyg cin = cout = 1 f t a = 25 c vin = 4.6 v vin = 4.3 v
ncp170 www. onsemi.com 11 typical characteristics figure 11. dropout voltage vs. output current, vout = 1.8 v figure 12. dropout voltage vs. output current, vout = 2.5 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 0 50 150 200 250 300 400 450 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 figure 13. dropout voltage vs. output current, vout = 3.0 v figure 14. dropout voltage vs. output current, vout = 3.6 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 0 50 100 150 200 250 140 120 100 80 60 40 20 0 0 25 50 75 125 150 175 200 figure 15. quiescent current vs. temperature, vout = 1.2 v figure 16. quiescent current vs. temperature, vout = 2.5 v temperature ( c) temperature ( c) 80 60 40 20 0 ?20 ?40 0.35 0.40 0.45 0.50 0.55 0.60 0.65 80 60 40 20 0 ?20 ?40 0.35 0.40 0.45 0.50 0.55 0.60 0.65 dropout voltage (mv) dropout voltage (mv) dropout voltage (mv) dropout voltage (mv) quiescent current ( a) quiescent current ( a) t a = 25 c ncp170xxx180tyg cin = cout = 1 f t a = 85 c t a = ?40 c 100 350 t a = 25 c ncp170xxx250tyg cin = cout = 1 f t a = 85 c t a = ?40 c t a = 25 c ncp170xxx300tyg cin = cout = 1 f t a = 85 c t a = ?40 c t a = 25 c ncp170xxx360tyg cin = cout = 1 f t a = 85 c t a = ?40 c 100 vin = 5.5 v vin = 5.0 v vin = 2.5 ? 4.0 v ncp170xxx120tyg cin = cout = 1 f iout = 0 vout = 1.2 v vin = 5.5 v vin = 5.0 v vin = 3.5 ? 4.0 v ncp170xxx250tyg cin = cout = 1 f iout = 0 vout = 2.5 v
ncp170 www. onsemi.com 12 typical characteristics figure 17. quiescent current vs. temperature, vout = 3.6 v figure 18. ground current vs. output current, vout = 1.2 v temperature ( c) output current (ma) 80 60 40 20 0 ?20 ?40 0.35 0.40 0.45 0.50 0.55 0.60 0.65 100 10 1 0.1 0.01 0 10 20 30 40 50 60 70 figure 19. ground current vs. output current, vout = 2.5 v figure 20. ground current vs. output current, vout = 3.6 v output current (ma) output current (ma) 100 10 1 0.1 0.01 0 10 20 30 40 50 70 80 100 10 1 0.1 0.01 0 10 20 30 50 60 70 80 figure 21. psrr vs. frequency, vout = 1.2 v figure 22. psrr vs. frequency, vout = 1.8 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 0 10 20 30 50 60 70 80 1m 100k 10k 1k 100 0 10 20 30 50 60 70 80 quiescent current ( a) ground current ( a) ground current ( a) ground current ( a) psrr (db) psrr (db) vin = 5.5 v vin = 5.0 v ncp170xxx360tyg cin = cout = 1 f iout = 0 vout = 3.6 v vin = 4.0 v vin = 5.5 v vin = 2.5 v ncp170xxx120tyg cin = cout = 1 f t a = 25 c vout = 1.2 v vin = 3.5 v vin = 5.5 v vin = 3.5 v ncp170xxx250tyg cin = cout = 1 f t a = 25 c vout = 2.5 v vin = 4.5 v 60 40 vin = 5.5 v vin = 4.6 v ncp170xxx360tyg cin = cout = 1 f t a = 25 c vout = 3.6 v vin = 5.0 v iout = 1 ma 10 ma 150 ma 100 ma 40 ncp170xxx120tyg cout = 1 f vin = 2.2 v+ 200 mvpp modulation t a = 25 c vout = 1.2 v iout = 1 ma 10 ma 150 ma 100 ma ncp170xxx180tyg cout = 1 f vin = 2.8 v+ 200 mvpp modulation t a = 25 c vout = 1.8 v 40
ncp170 www. onsemi.com 13 typical characteristics figure 23. psrr vs. frequency, vout = 3.0 v figure 24. psrr vs. frequency, vout = 3.6 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 0 10 20 30 40 50 60 70 1m 100k 10k 1k 100 0 10 20 30 40 50 60 70 figure 25. output voltage noise spectral density, vout = 1.2 v figure 26. output voltage noise spectral density, vout = 1.8 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 100k 10k 1k 100 0 0.2 0.6 0.8 1.2 1.4 1.6 2.0 figure 27. output voltage noise spectral density, vout = 3.0 v figure 28. output voltage noise spectral density, vout = 3.6 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1m 100k 10k 1k 100 10 0 0.5 1.0 1.5 2.0 3.0 3.5 4.0 psrr (db) psrr (db) output voltage noise spectral density ( v/ hz) output voltage noise spectral density ( v/ hz) iout = 1 ma 10 ma 150 ma 100 ma ncp170xxx300tyg cout = 1 f vin = 4.0 v+ 200 mvpp modulation t a = 25 c vout = 3.0 v iout = 1 ma 10 ma 150 ma 100 ma ncp170xxx360tyg cout = 1 f vin = 4.6 v+ 200 mvpp modulation t a = 25 c vout = 3.6 v ncp170xxx120tyg cin = cout = 1 f vin = 5.5 v vout = 1.2 v iout = 1 ma t a = 25 c ncp170xxx180tyg cin = cout = 1 f vin = 5.5 v vout = 1.8 v iout = 1 ma t a = 25 c ncp170xxx300tyg cin = cout = 1 f vin = 5.5 v vout = 3.0 v iout = 1 ma t a = 25 c ncp170xxx360tyg cin = cout = 1 f vin = 5.5 v vout = 3.6 v iout = 1 ma t a = 25 c 0.4 1.0 1.8 2.5 output voltage noise spectral density ( v/ hz) 10 output voltage noise spectral density ( v/ hz)
ncp170 www. onsemi.com 14 typical characteristics figure 29. load transient response at load step from 1 ma to 50 ma, vout = 1.2 v figure 30. load transient response at load step from 0.1 ma to 50 ma, vout = 1.2 v figure 31. load transient response at load step from 0.1 ma to 10 ma, vout = 1.2 v figure 32. load transient response at load step from 1 ma to 50 ma, vout = 2.5 v figure 33. load transient response at load step from 0.1 ma to 50 ma, vout = 2.5 v figure 34. load transient response at load step from 0.1 ma to 10 ma, vout = 2.5 v output voltage output current
ncp170 www. onsemi.com 15 typical characteristics figure 35. load transient response at load step from 1ma to 50 ma, vout= 3.0 v figure 36. load transient response at load step from 0.1 ma to 50 ma, vout = 3.0 v figure 37. load transient response at load step from 0.1 ma to 10 ma, vout = 3.0 v figure 38. load transient response at load step from 1 ma to 50 ma, vout = 3.6 v figure 39. load transient response at load step from 0.1 ma to 50 ma, vout = 3.6 v figure 40. load transient response at load step from 0.1 ma to 10 ma, vout = 3.6 v
ncp170 www. onsemi.com 16 typical characteristics figure 41. output voltage with and without active discharge feature, vout = 1.2 v figure 42. output voltage with and without active discharge feature, vout = 2.5 v figure 43. output voltage with and without active discharge feature, vout = 3.0 v figure 44. output voltage with and without active discharge feature, vout = 3.6 v
ncp170 www. onsemi.com 17 typical characteristics figure 45. enable turn?on response at vout = 1.2 v figure 46. enable turn?on response at vout = 1.8 v figure 47. enable turn?on response at vout = 2.5 v figure 48. enable turn?on response at vout = 3.6 v
ncp170 www. onsemi.com 18 applications information general the ncp170 is a high performance 150 ma linear regulator with ultra low iq. this device delivers low noise and high power supply rejection ratio with excellent dynamic performance due to employing the dynamic quiescent current adjustment which assure ultra low i q consumption at no ? load state. these parameters make this device very suitable for various battery powered applications. input decoupling (c in ) it is recommended to connect at least a 1 f ceramic x5r or x7r capacitor between in and gnd pins of the device. this capacitor will provide a low impedance path for any unwanted ac signals or noise superimposed onto constant input voltage. the good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. higher capacitance and lower esr capacitors will improve the overall line transient response. output decoupling (c out ) the ncp170 does not require a minimum equivalent series resistance (esr) for the output capacitor. the device is designed to be stable with standard ceramics capacitors with values of 1.0 f or greater up to 10 f. the x5r and x7r types have the lowest capacitance variations over temperature thus they are recommended. there is recommended connect the output capacitor as close as possible to the output pin of the regulator. enable operation the ncp170 uses the en pin to enable /disable its device and to activate /deactivate the active discharge function at devices with this feature. if the en pin voltage is pulled below 0.4 v the device is guaranteed to be disable. the active discharge transistor at the devices with active discharge feature is activated and the output voltage vout is pulled to gnd through an internal circuitry with ef fective resistance about 100 ohms. if the en pin voltage is higher than 1.2 v the device is guaranteed to be enabled. the internal active discharge circuitry is switched off and the desired output voltage is available at output pin. in case the enable function is not required the en pin should be connected directly to input pin. thermal shutdown when the die temperature exceeds the thermal shutdown point (tsd = 175 c typical) the device goes to disabled state and the output voltage is not delivered until the die temperature decreases to 150 c. the thermal shutdown feature provides a protection from a catastrophic device failure at accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. power dissipation and heat sinking the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. for reliable operation, junction temperature should be limited to +125 c. the maximum power dissipation the ncp170 device can handle is given by: p d(max) t j(max) t a r ja (eq. 1) the power dissipated by the ncp170 device for given application conditions can be calculated from the following equations: p d v in i gnd (i out ) i out v in v out (eq. 2) or v in(max) p d(max) v out
i out i out i gnd (eq. 3) hints v in and gnd printed circuit board traces should be as wide as possible. when the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. place external components, especially the output capacitor, as close as possible to the ncp170, and make traces as short as possible.
ncp170 www. onsemi.com 19 ordering information device nominal output voltage marking active discharge package shipping ? ncp170amx120tcg 1.2 ac yes xdfn4 1.0 1.0 (pb-free) 3000 / tape & reel ncp170amx135tcg 1.35 ap ncp170amx150tcg 1.5 aj ncp170amx170tcg 1.7 at ncp170amx180tcg 1.8 ad ncp170amx190tcg 1.9 al ncp170amx250tcg 2.5 ae ncp170amx280tcg 2.8 af ncp170amx285tcg 2.85 ak ncp170amx300tcg 3.0 aa ncp170amx310tcg 3.1 an ncp170amx320tcg 3.2 aq ncp170amx330tcg 3.3 ag ncp170amx360tcg 3.6 am ncp170bmx120tcg 1.2 2c no ncp170bmx135tcg 1.35 2p ncp170bmx150tcg 1.5 2j NCP170BMX170TCG 1.7 2t ncp170bmx180tcg 1.8 2d ncp170bmx190tcg 1.9 2l ncp170bmx250tcg 2.5 2e ncp170bmx280tcg 2.8 2f ncp170bmx285tcg 2.85 2k ncp170bmx300tcg 3.0 2a ncp170bmx310tcg 3.1 2n ncp170bmx320tcg 3.2 2q ncp170bmx330tcg 3.3 2g ncp170bmx360tcg 3.6 2m
ncp170 www. onsemi.com 20 ordering information device shipping ? package active discharge marking nominal output voltage ncp170axv120t2g 1.2 ac yes sot?563 (pb-free) 4000 / tape & reel (available soon) ncp170axv135t2g 1.35 al ncp170axv150t2g 1.5 aj ncp170axv180t2g 1.8 ad ncp170axv190t2g 1.9 am ncp170axv210t2g 2.1 ak ncp170axv250t2g 2.5 ae ncp170axv280t2g 2.8 af ncp170axv300t2g 3.0 aa ncp170axv310t2g 3.1 an ncp170axv330t2g 3.3 ah ncp170bxv120t2g 1.2 2c no ncp170bxv135t2g 1.35 2l ncp170bxv150t2g 1.5 2j ncp170bxv180t2g 1.8 2d ncp170bxv190t2g 1.9 2m ncp170bxv250t2g 2.5 2e ncp170bxv280t2g 2.8 2f ncp170bxv300t2g 3.0 2a ncp170bxv310t2g 3.1 2n ncp170bxv330t2g 3.3 2h ncp170asn280t2g 2.8 gca yes tsop?5 (pb-free) 3000 / tape & reel (available soon) ncp170asn300t2g 3.0 gcc ncp170asn330t2g 3.3 gcd ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncp170 www. onsemi.com 21 package dimensions xdfn4 1.0x1.0, 0.65p mx suffix case 711aj issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20 mm from the terminal tips. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 bottom view b e 4x note 3 2x 0.05 c pin one reference top view 2x 0.05 c a a1 (a3) 0.05 c 0.05 c c seating plane side view l 4x 1 2 dim min max millimeters a 0.33 0.43 a1 0.00 0.05 a3 0.10 ref b 0.15 0.25 d 1.00 bsc d2 0.43 0.53 e 1.00 bsc e 0.65 bsc l 0.20 0.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* 1.20 0.26 0.24 4x dimensions: millimeters 0.39 recommended package outline note 4 e/2 d2 45 a m 0.05 b c 4 3 0.65 pitch detail a 4x b2 0.02 0.12 l2 0.07 0.17 4x 0.52 2x 0.11 4x l2 4x detail a b2 4x
ncp170 www. onsemi.com 22 package dimensions h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches sot?563, 6 lead xv suffix case 463a issue g e m 0.08 (0.003) x b 6 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007
ncp170 www. onsemi.com 23 package dimensions tsop?5 case 483 issue m 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimension a. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a b c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 m 0 10 s 2.50 3.00 123 54 s a g b d h c j 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 c seating plane 0.05 k m detail z detail z top view side view a b end view 1.35 1.65 2.85 3.15 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncp170/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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